Počet záznamov: 1
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
- CHAUHAN, Prerna et al. Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. In Journal of Applied Physics. 125, iss. 10 (2019), s. 5304-5304. ISSN 0021-8979 (2.286 - 2019). E*autor nedodal podklady
Počet záznamov: 1