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Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure
Údaje o názve Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure / aut. Peter Šichman, Stanislav Hasenöhrl, Roman Stoklas, Juraj Priesol, Edmund Dobročka, Štefan Haščík, Filip Gucmann, Andrej Vincze, Aleš Chvála, Juraj Marek, Alexander Šatka, Ján Kuzmík Záhlavie-meno Šichman, Peter (Autor) Ďal.zodpovednosť Hasenöhrl, Stanislav Z5 (Autor) Stoklas, Roman (Autor) Priesol, Juraj, 1986- Z2 (Autor) - FEI Ústav elektroniky a fotoniky Dobročka, Edmund, 1955- Z5 (Autor) Haščík, Štefan Z5 (Autor) Gucmann, Filip, 1987- (Autor) Vincze, Andrej, 1975- (Autor) Chvála, Aleš, 1981- Z2 (Autor) - FEI Ústav elektroniky a fotoniky Marek, Juraj, 1983- Z2 (Autor) - FEI Ústav elektroniky a fotoniky Šatka, Alexander, 1960- Z1 (Autor) - FEI Ústav elektroniky a fotoniky Kuzmík, Ján (Autor) In Materials Science in Semiconductor Processing. -- ISSN 1369-8001. -- Vol. 118, (2020), Art. no. 105203 [5] s. Predmet.heslá GaN Vertical transistor Semi-insulating Jazyk dok. angličtina Druh dok. RBX - článok z periodika Kategória ADC - Vedecké práce v zahraničných karentovaných časopisoch Kategória od 2022 V3 - Vedecký výstup publikačnej činnosti z časopisu Rok 2020 Ohlasy [1] 2021: MOCHIZUKI, Kazuhiro - HORIKIRI, Fumimasa - OHTA, Hiroshi - MISHIMA, Tomoyoshi. Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN. In JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, vol. 60, no. 1, pp. ISSN 0021-4922. [1] 2021: PAN, Yong. Influence of N-vacancy on the electronic and optical properties of bulk GaN from first-principles investigations. In INTERNATIONAL JOURNAL OF ENERGY RESEARCH, 2021, vol., no., pp. ISSN 0363-907X. 2023: QIN, Yuan - ALBANO, Benjamin - SPENCER, Joseph - LUNDH, James Spencer - WANG, Boyan - BUTTAY, Cyril - TADJER, Marko - DIMARINO, Christina - ZHANG, Yuhao. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, vol. 56, no. 9, pp. ISSN 0022-3727. 2023: HRUBISAK, Fedor - HUSEKOVA, Kristina - ZHENG, Xiang - ROSOVA, Alica - DOBROCKA, Edmund - TAPAJNA, Milan - MICUSIK, Matej - NADAZDY, Peter - EGYENES, Fridrich - KESHTKAR, Javad - KOVACOVA, Eva - POMEROY, James W. - KUBALL, Martin - GUCMANN, Filip. Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, vol. 41, no. 4, art. no. 042708. ISSN 0734-2101. 2024: WOO, Kelly - BIAN, Zhengliang - NOSHIN, Maliha - PEREZ MARTINEZ, Rafael - MALAKOUTIAN, Mohamadali - SHANKAR, Bhawani - CHOWDHURY, Srabanti. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices. In: Journal of Physical Materials, 2024, vol. 7, no. 2, art. no. 022003. ISSN 2515-7639. 
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