Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide

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Title statement	Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide
Main entry-name	Gregušová, Dagmar (Author)
Another responsib.	Stoklas, Roman (Author)
	Čičo, Karol (Author)
	Lalinský, Tibor (Author)
	Fröhlich, Karol (Author)
	Novák, J. (Author)
	Kordoš, Pavol (Author)
In	EW-MOVPE. 12th European Workshop on Metalorganic Vapour Phase Epitaxy : Bratislava, Slovakia, 3.-6.6.2007. -- Bratislava : Slovak Academy of Sciences, 2007. -- s.85-88
Language	English
Document kind	RZB - článok zo zborníka
Year	2007

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