Number of the records: 1
Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide
SYS stu151110 LBL 00000naa--22000003a-4500 005 20191202093151.8 008 071126s2007------------------------eng-d 040 $a STU $b slo 041 0-
$a eng 100 1-
$a Gregušová, Dagmar $4 aut $7 stu_us_auth*stu58958 245 1-
$a Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide 700 1-
$a Stoklas, Roman $4 aut $7 stu_us_auth*stu65020 700 1-
$a Čičo, Karol $4 aut $7 stu_us_auth*stu58894 700 1-
$a Lalinský, Tibor $4 aut $7 stu_us_auth*stu83001 700 1-
$a Fröhlich, Karol $4 aut $7 stu_us_auth*stu50032 $X 36487 700 1-
$a Novák, J. $4 aut $7 stu_us_auth*stu68763 700 1-
$a Kordoš, Pavol $4 aut $7 stu_us_auth*stu58281 773 0-
$7 nnam $d Bratislava : Slovak Academy of Sciences, 2007 $t EW-MOVPE. 12th European Workshop on Metalorganic Vapour Phase Epitaxy : Bratislava, Slovakia, 3.-6.6.2007 $w stu_us_cat*stu149217 $g s.85-88
Number of the records: 1