- Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN…
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Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide

  1. Gregušová, Dagmar Preparation and Properties of MOSHFETs Based on MOVPE Grown AlGaN/GaN Heterostructure and MOCVD Deposited Al2O3 Gate Oxide. Stoklas, Roman. Čičo, Karol. Lalinský, Tibor. Fröhlich, Karol. Novák, J.. Kordoš, Pavol In: Bratislava : Slovak Academy of Sciences, 2007. -- EW-MOVPE. 12th European Workshop on Metalorganic Vapour Phase Epitaxy : Bratislava, Slovakia, 3.-6.6.2007. -- s.85-88.
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