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  1. 1.EBIC analysis of semi-insulating GaN/Si-doped GaN-on-GaN test structures for vertical GaN transistors

    EBIC analysis of semi-insulating GaN/Si-doped GaN-on-GaN test structures for vertical GaN transistors / aut. Juraj Priesol, Alexander Šatka, Aleš Chvála, Peter Šichman, Stanislav Hasenöhrl, Ján Kuzmík, František Uherek
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Chvála Aleš ; 033000 Šichman Peter Hasenöhrl Stanislav Kuzmík Ján Uherek František ; 033000
    WOCSDICE‐EXMATEC 2022 : . S. OP 94-95
    článok zo zborníka
    BEE - Scientific works in not noticed year-books from international undertakings, foreign year-books
    O2 - Odborný výstup publikačnej činnosti ako časť knižnej publikácie alebo zborníka
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  2. 2.Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique

    Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique / aut. Juraj Priesol, Alexander Šatka, Aleš Chvála, Steve Stoffels, Brice De Jaeger, Stefaan Decoutere
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Chvála Aleš ; 033000 Stoffels Steve De Jaeger Brice Decoutere Stefaan
    IEEE Transactions on Electron Devices . Vol. 68, No. 1 (2021), s. 216-221
    AlGaN/GaN electric field electrical stress EBIC Focused Ion Beam Scanning electron microscopy Schottky diode TCAD simulation
    https://ieeexplore.ieee.org/document/9288930
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
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  3. 3.Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels

    Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: Role of deep levels / aut. Roman Stoklas, Aleš Chvála, Peter Šichman, Stanislav Hasenöhrl, Štefan Haščík, Juraj Priesol, Alexander Šatka, Ján Kuzmík
    Stoklas Roman  Chvála Aleš ; 033000 Šichman Peter Hasenöhrl Stanislav Haščík Štefan Priesol Juraj ; 033000 Šatka Alexander ; 033000 Kuzmík Ján
    IEEE Transactions on Electron Devices . Vol. 68, No. 5 (2021), s. 2365-2371
    Carrier compensation electrical breakdown Semi-insulating simulation space-charge-limited current Vertical transistor
    https://ieeexplore.ieee.org/document/9384237
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
    article

    article

  4. 4.Investigation of EBIC line profiles at the p-n junction by numerical simulations using Monte Carlo method

    Investigation of EBIC line profiles at the p-n junction by numerical simulations using Monte Carlo method / aut. Juraj Priesol, Alexander Šatka, Karen Geens
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Geens Karen
    SURFINT - SREN VII : . S. 49-50
    článok zo zborníka
    AFG - Abstractions of scientific titles in year-books from international conferences
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    article

  5. 5.Diagnostika materiálov a štruktúr metódami rastrovacej a interferenčnej mikroskopie

    Diagnostika materiálov a štruktúr metódami rastrovacej a interferenčnej mikroskopie / aut. Daniel Haško, Juraj Priesol, Jozef Chovan ; ed. Alexander Šatka
    Haško Daniel  Šatka Alexander ; 033000 Priesol Juraj ; 033000 Chovan Jozef
    Fotonika 2020 : . S. 30-33
    mikroskopické metódy diagnostika povrchov nové materiály a štruktúry
    článok zo zborníka
    AFD - Reports at home scientific conferences
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    article

  6. 6.Investigation of semi-vertical GaN FET structures using EBIC method

    Investigation of semi-vertical GaN FET structures using EBIC method / aut. Alexander Šatka, Juraj Priesol, Shuzhen You, Karen Geens, Stefaan Decoutere
    Šatka Alexander ; 033000  Priesol Juraj ; 033000 You Shuzhen Geens Karen Decoutere Stefaan
    Solid State Surfaces and Interfaces : . S. 92-93
    článok zo zborníka
    AFH - Abstractions of scientific titles in year-books from home conferences
    article

    article

  7. 7.Characterization of In-rich InAlN layers by panchromatic and spectrally resolved cathodoluminescence

    Characterization of In-rich InAlN layers by panchromatic and spectrally resolved cathodoluminescence / aut. Juraj Priesol, Alexander Šatka, Ján Kuzmík, Stanislav Hasenöhrl, Prerna Chauhan, František Uherek, Daniel Haško
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Kuzmík Ján Hasenöhrl Stanislav Chauhan Prerna Uherek František ; 033000 Haško Daniel
    Solid State Surfaces and Interfaces : . S. 76-77
    článok zo zborníka
    AFH - Abstractions of scientific titles in year-books from home conferences
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    article

  8. 8.Charakterizácia polovodičových štruktúr pre vertikálne GaN tranzistory metódami SEM

    Charakterizácia polovodičových štruktúr pre vertikálne GaN tranzistory metódami SEM / aut. Juraj Priesol, Alexander Šatka, František Uherek, Daniel Haško, Peter Šichman, Stanislav Hasenöhrl, Ján Kuzmík
    Priesol Juraj ; 033000  Šatka Alexander ; 033000 Uherek František ; 033000 Haško Daniel Šichman Peter Hasenöhrl Stanislav Kuzmík Ján
    Fotonika 2020 : . S. 11-14
    vertikálny GaN tranzistor rastrovacia elektrónová mikroskopia katódoluminiscencia
    článok zo zborníka
    AFD - Reports at home scientific conferences
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    article

  9. 9.Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

    Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure / aut. Peter Šichman, Stanislav Hasenöhrl, Roman Stoklas, Juraj Priesol, Edmund Dobročka, Štefan Haščík, Filip Gucmann, Andrej Vincze, Aleš Chvála, Juraj Marek, Alexander Šatka, Ján Kuzmík
    Šichman Peter  Hasenöhrl Stanislav Stoklas Roman Priesol Juraj ; 033000 Dobročka Edmund Haščík Štefan Gucmann Filip Vincze Andrej Chvála Aleš ; 033000 Marek Juraj ; 033000 Šatka Alexander ; 033000 Kuzmík Ján
    Materials Science in Semiconductor Processing . Vol. 118, (2020), Art. no. 105203 [5] s.
    GaN Vertical transistor Semi-insulating
    https://www.sciencedirect.com/science/article/pii/S1369800120307344
    článok z periodika
    ADC - Scientific titles in foreign carented magazines and noticed year-books
    V3 - Vedecký výstup publikačnej činnosti z časopisu
    article

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  10. 10.Measurement of the reverse recovery characteristics of p-n junction diodes by TDT and TDR methods

    Measurement of the reverse recovery characteristics of p-n junction diodes by TDT and TDR methods / aut. Martin Vilhan, Alexander Šatka, Juraj Priesol
    Vilhan Martin ; 034000  Šatka Alexander ; 033000 Priesol Juraj ; 033000
    ADEPT 2019 : . S. 251-254
    time domain reflectometry time domain transmission diode reverse recovery time minority carrier lifetime
    článok zo zborníka
    AFD - Reports at home scientific conferences
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    article